FIR150N06PG Datasheet, Mosfet, First Semiconductor

FIR150N06PG Features

• Mosfet ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high

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Part number:

FIR150N06PG

Manufacturer:

First Semiconductor

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4.05MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

FIR150N06PG Application

• Applications General Features ƽ VDS =60V,ID =150A RDS(ON) <4.5mΩ @ VGS=10V ƽ High density cell design for ultra low Rdson ƽ Fully characterized Ava

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FIR150N06PG

First Semiconductor

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