FIR4N65F N-Channel MOSFET

INCHANGE

Description

isc N-Channel Mosfet Transistor INCHANGE Semiconductor FIR4N65F *.

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Datasheet Specifications

Part number: FIR4N65F
Manufacturer: INCHANGE
File Size: 194.74 KB
Datasheet: FIR4N65F-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Current
* ID= 4A@ TC=25℃
* Drain Source Voltage- : VDSS= 650V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max)
* Avalanche Energy Specified
* Fast Switching
* Simple Drive Requirements
* Minimum Lot-to-Lot variations for robust device performance and

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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FIR4N65F N-Channel MOSFET INCHANGE

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