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FIR4N65F

N-Channel MOSFET

FIR4N65F Features

* Drain Current

* ID= 4A@ TC=25℃

* Drain Source Voltage- : VDSS= 650V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 3.0Ω(Max)

* Avalanche Energy Specified

* Fast Switching

* Simple Drive Requirements

* Minimum Lot-to-Lot variations for robust device performance and

FIR4N65F Datasheet (194.74 KB)

Preview of FIR4N65F PDF

Datasheet Details

Part number:

FIR4N65F

Manufacturer:

INCHANGE

File Size:

194.74 KB

Description:

N-channel mosfet.

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FIR4N65F N-Channel MOSFET INCHANGE

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