Datasheet4U.com

FIR3441AG - P-Channel Enhancement Mode Power MOSFET

First Semiconductor

📥 Download Datasheet

FIR3441AG Datasheet Preview — Preview of FIR3441AG PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	FIR3441AG
Manufacturer	First Semiconductor
File Size	1.42 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	FIR3441AG-FirstSemiconductor.pdf

FIR3441AG Product details

Description

The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

📁 FIR3441AG Similar Datasheet

FIR20N120TDG - IGBT (American First Semiconductor)
FIR4N65F - N-Channel MOSFET (INCHANGE)
FIRC5730W09-B20 - SMD Type 730nm Infrared Emitter (CT Micro)
FIRP1608X09-H5 - Infrared Emitter (CT Micro)

Other Datasheets by First Semiconductor

FIR120N055PG - N-Channel Enhancement Mode Power Mosfet
FIR140N098PG - Power Mosfet
FIR140N098RG - Power Mosfet
FIR150N06PG - N-Channel Enhancement Mode Power Mosfet
FIR2N60FG - Advanced N-Ch Power MOSFET
FIR80N075P - N-Channel Power MOSFET

Published: May 22, 2015 |