FIR3441AG P-Channel Enhancement Mode Power MOSFET

First Semiconductor

Description

P-Channel Enhancement Mode Power MOSFET .
The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: FIR3441AG
Manufacturer: First Semiconductor
File Size: 1.42 MB
Datasheet: FIR3441AG-FirstSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

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FIR3441AG P-Channel Enhancement Mode Power MOSFET First Semiconductor

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