FIR3441AG Datasheet, Mosfet, First Semiconductor

FIR3441AG Features

• Mosfet
• VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
• High Power and current handing capability
• Lead free product is acquired

PDF File Details

Part number:

FIR3441AG

Manufacturer:

First Semiconductor

File Size:

1.42MB

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a

FIR3441AG Application

• Applications General Features
• VDS = -30V,ID = -4.4A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 50mΩ @ VGS=-10V
• High Power and current

TAGS

FIR3441AG

First Semiconductor

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