Part number:
FIR2N60FG
Manufacturer:
First Semiconductor
File Size:
890.88 KB
Description:
Advanced n-ch power mosfet.
* High Voltage: BVDSS=600V(Min.)
* Low Crss : Crss=3.4F(Typ.)
* Low gate charge : Qg= 7.0nC(Typ.)
* Low RDS(on) :RDS(on)=7.0Ω(Max.) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = Specific Device Code Absolut
FIR2N60FG Datasheet (890.88 KB)
FIR2N60FG
First Semiconductor
890.88 KB
Advanced n-ch power mosfet.
📁 Related Datasheet
FIR20N120TDG - IGBT
(American First Semiconductor)
IGBT
Features
1200V,20A,Vce(on)(typ)=2.3V@Vge=15V High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA.
FIR120N055PG - N-Channel Enhancement Mode Power Mosfet
(First Semiconductor)
N-Channel Enhancement Mode Power Mosfet
Description
The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low .
FIR140N098PG - Power Mosfet
(First Semiconductor)
FIR140N098PG/RG
Features Uses split-gate technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product Qualified according to JEDEC cri.
FIR140N098RG - Power Mosfet
(First Semiconductor)
FIR140N098PG/RG
Features Uses split-gate technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product Qualified according to JEDEC cri.
FIR150N06PG - N-Channel Enhancement Mode Power Mosfet
(First Semiconductor)
N-Channel Enhancement Mode Power Mosfet
Description
The FIR150N06G uses advanced trench technology and design to provide excellent RDS(ON) with low ga.
FIR3441AG - P-Channel Enhancement Mode Power MOSFET
(First Semiconductor)
P-Channel Enhancement Mode Power MOSFET
Description
The FIR3441AG uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.
FIR4N65F - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
FIR4N65F
·FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·S.
FIR80N075P - N-Channel Power MOSFET
(First Semiconductor)
N-Channel Enhancement Mode Power MOSFET
General Description
The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) wi.