FIR2N60FG - Advanced N-Ch Power MOSFET

First Semiconductor

Datasheet Details

Part number	FIR2N60FG
Manufacturer	First Semiconductor
File Size	890.88 KB
Description	Advanced N-Ch Power MOSFET
Datasheet	FIR2N60FG-FirstSemiconductor.pdf

High Voltage: BVDSS=600V(Min. ).
Low Crss : Crss=3.4F(Typ. ).
Low gate charge : Qg= 7.0nC(Typ. ).
Low RDS(on) :RDS(on)=7.0Ω(Max. ) G D S D G S Marking Diagram Y A YAWW = Year = Assembly Location = Work Week WW FIR2N60F FIR2N60F = Specific Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC).
Drain current (Pulsed) Power dissipation Avalanche current (S.

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Published: Jun 2, 2014 |