FIR80N075PG Datasheet, Mosfet, First Semiconductor

FIR80N075PG Features

• Mosfet ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power controls ƽ High density cell design for

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Part number:

FIR80N075PG

Manufacturer:

First Semiconductor

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3.23MB

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📄 Datasheet

Description:

N-channel power mosfet. The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable

FIR80N075PG Application

• Applications Features ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for

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FIR80N075PG

First Semiconductor

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