FIR8N60FG Silicon N-Channel Power MOSFET

First Semiconductor

Description

CSD18503KCS www.ti.com SLPS368 * SEPTEMBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503KCS 1 .
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

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Datasheet Specifications

Part number: FIR8N60FG
Manufacturer: First Semiconductor
File Size: 1.59 MB
Datasheet: FIR8N60FG-FirstSemiconductor.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

Applications

* DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control ABSOLUTE MAXIMUM RATINGS TA = 25°C VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C

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FIR8N60FG Silicon N-Channel Power MOSFET First Semiconductor

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