FIR8N60FG Datasheet - First Semiconductor

Datasheet Details

Part number:

FIR8N60FG

Manufacturer:

First Semiconductor

File Size:

1.59 MB

Description:

Silicon N-Channel Power MOSFET

Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

FIR8N60FG-FirstSemiconductor.pdf

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FIR8N60FG, Silicon N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

(1) Pulse duration ≤300μs, duty cycle ≤2% 16 RDS(on) - On-State Resistance (mΩ) 14 12 10 8 6 4 2 0 0 2 4 RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 75A TC = 125ºC Id = 75A GATE CHA

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FIR8N60FG Silicon N-Channel Power MOSFET First Semiconductor

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