MCZ33285 Datasheet - Freescale Semiconductor

MCZ33285 Dual High-Side TMOS Driver

INTRODUCTION FUNCTIONAL DESCRIPTION INTRODUCTION The power FETs are turned ON by charging their gate capacities with a current flowing out of pins OUT1 and OUT2. During PWM, the values of table below are guaranteed. They are measured with 8.0 nF on OUT1 and 16 nF on OUT2. Test condition VIN: ramp 0.

www.DataSheet4U.com Freescale Semiconductor Advance Information Document Number: MC33285 Rev. 5.0, 2/2007 Dual High-Side TMOS Driver A single input controls the 33285 in driving two external high-side NChannel TMOS power FETs controlling incandescent or inductive loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is possible. The 33285 contains a common internal charge pump used to enhance the Gate voltage of both FETs. An external charge capacitor provides access to the charge pump .

MCZ33285 Features

* PWM Capability

* Power TMOS Number One (OUT1) Short-Circuit Detection and Short-Circuit Protection

* Voltage Range 7.0 V ≤ 40 V

* Extended Temperature Range from -40°C ≤ 125°C

* Load Dump Protected

* Overvoltage Detection and Activation of OUT2 Durin

MCZ33285_FreescaleSemiconductor.pdf