MRF9080LSR3 Datasheet - Freescale Semiconductor

MRF9080LSR3 RF Power Field Effect Transistors

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Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large signal, common www.datasheet4u.com source amplifier applications in 26 volt base station equipment. Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 7.

MRF9080LSR3 Features

* source Ω 0.91

* j2.11 0.88

* j2.65 1.6

* j2.61 2.45

* j3.38 Zload Ω 1.22

* j0.12 1.00

* j0.16 1.22

* j0.22 1.14

* j0.41 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from d

MRF9080LSR3 Datasheet (344.23 KB)

MRF9080LSR3 Datasheet Preview — Preview of MRF9080LSR3 PDF

Datasheet Details

Part number:

MRF9080LSR3

Manufacturer:

Freescale Semiconductor

File Size:

344.23 KB

Description:

Rf power field effect transistors.

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