MW5IC2030GNBR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MW5IC2030GNBR1, RF LDMOS Wideband Integrated Power Amplifiers

1.8 pF High Q Chip Capacitor (0603) 1.5 pF High Q Chip Capacitor (0603) 3.9 pF High Q Chip Capacitor (0603) 6.8 pF High Q Chip Capacitor (0805) 100 pF Class 1 NPO Chip Capacitors (0805) 4.7 pF Class 1 NPO Chip Capacitor (0805) 0.1 µF X7R Chip Capacitors (1206) 0.01 µF Class 2 X7R Chip Capacitors (08

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev.

7, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz.

This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats.

Final Application Typical CDMA Performance: VDD = 27 Volts, IDQ1 = 160 mA, IDQ2 = 230

MW5IC2030GNBR1 Features

* MW5IC2030GNBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS

* 15 IMD, INTERMODULATION DISTORTION (dBc)

* 20

* 25

* 30

* 35

* 40

* 45

* 50

* 55

* 60 0.1 1 10 100 TWO

* TONE SPACING (MHz) 7th Order 3rd Or