MW7IC008NT1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifier

MW7IC008NT1, RF LDMOS Wideband Integrated Power Amplifier

0.01 μF Chip Capacitor 0.1 μF Chip Capacitors 10 μF Chip Capacitors 0.01 μF Chip Capacitors 1 μF, 35 V Tantalum Capacitors 2.2 pF Chip Capacitor 3.3 pF Chip Capacitor 150 nH Ceramic Chip Inductors 180 nH Ceramic Chip Inductors 1.6 nH Inductor 5.1 nH Inductors 510 Ω, 1/10 W Chip Resistors 91 Ω, 1/8 W

Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev.

1, 9/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifier The MW7IC008N wideband integrated circuit is designed with on - chip matching that makes it usable from 100 to 1000 MHz.

This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical radio base station modulation formats.

Driver Applications Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA Freque

MW7IC008NT1 Features

* Broadband, Single Matching Network from 20 to 1000 MHz

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. T1 Suffix