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MW7IC915NT1 Datasheet - Freescale Semiconductor

MW7IC915NT1 RF LDMOS Wideband Integrated Power Amplifier

1.8 pF Chip Capacitor 0.8 pF Chip Capacitors 6.2 pF Chip Capacitor 3.3 pF Chip Capacitor 47 pF Chip Capacitors 1 μF Chip Capacitors 0.01 μF Chip Capacitors 4.7 μF Chip Capacitors 10 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2 kΩ, 1/4 W Resistors Part Number ATC100B1R8BT500XT ATC1.
Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev. 0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application 900 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 m.

MW7IC915NT1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

* Integrated ESD Protec

MW7IC915NT1 Datasheet (430.68 KB)

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Datasheet Details

Part number:

MW7IC915NT1

Manufacturer:

Freescale Semiconductor

File Size:

430.68 KB

Description:

Rf ldmos wideband integrated power amplifier.

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MW7IC915NT1 LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor

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