MW7IC915NT1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifier

MW7IC915NT1, RF LDMOS Wideband Integrated Power Amplifier

1.8 pF Chip Capacitor 0.8 pF Chip Capacitors 6.2 pF Chip Capacitor 3.3 pF Chip Capacitor 47 pF Chip Capacitors 1 μF Chip Capacitors 0.01 μF Chip Capacitors 4.7 μF Chip Capacitors 10 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2 kΩ, 1/4 W Resistors Part Number ATC100B1R8BT500XT ATC1

Freescale Semiconductor Technical Data Document Number: MW7IC915N Rev.

0, 9/2009 RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Driver Application 900 MHz Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 m

MW7IC915NT1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)

* Integrated ESD Protec