Part number:
2SK2518-01MR
Manufacturer:
Fuji Electric
File Size:
176.75 KB
Description:
N-channel mos-fet.
2SK2518-01MR Datasheet (176.75 KB)
* High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 200V 0,13Ω 20A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings
2SK2518-01MR Datasheet (176.75 KB)
2SK2518-01MR
Fuji Electric
176.75 KB
N-channel mos-fet.
📁 Related Datasheet
2SK2510 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2510
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2510 is N-Channel MOS Field Effe.
2SK2511 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2511
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2511 is N-Channel MOS Field Effe.
2SK2512 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2512
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effe.
2SK2514 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2514
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2514 is N-Channel MOS Field Effe.
2SK2515 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2515
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2515 is N-Channel MOS Field Effe.
2SK2516-01L - N-channel MOS-FET
(Fuji Electric)
2SK2516-01L,S
FAP-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-chann.
2SK2516-01S - N-channel MOS-FET
(Fuji Electric)
2SK2516-01L,S
FAP-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-chann.
2SK2517-01L - N-channel MOS-FET
(Fuji Electric)
2SK2517-01L,S
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel.
