2SK2518-01MR Datasheet, Mos-fet, Fuji Electric

2SK2518-01MR Features

• Mos-fet High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 200V 0,13Ω 20A 50W > Outline Dr

PDF File Details

Part number:

2SK2518-01MR

Manufacturer:

Fuji Electric

File Size:

176.75kb

Download:

📄 Datasheet

Description:

N-channel mos-fet.

2SK2518-01MR Application

• Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Rat

TAGS

2SK2518-01MR

Fuji Electric

📁 Related Datasheet

2SK2510 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2510 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2510 is N-Channel MOS Field Effe.

2SK2511 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2511 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2511 is N-Channel MOS Field Effe.

2SK2512 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2512 is N-Channel MOS Field Effe.

2SK2514 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2514 is N-Channel MOS Field Effe.

2SK2515 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2515 is N-Channel MOS Field Effe.

2SK2516-01L - N-channel MOS-FET (Fuji Electric)
2SK2516-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-chann.

2SK2516-01S - N-channel MOS-FET (Fuji Electric)
2SK2516-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-chann.

2SK2517-01L - N-channel MOS-FET (Fuji Electric)
2SK2517-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel.

2SK2517-01S - N-channel MOS-FET (Fuji Electric)
2SK2517-01L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel.

2SK2519-01 - N-channel MOS-FET (Fuji Electric)
2SK2519-01 FAP-II Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee.