Part number:
2SK2515
Manufacturer:
NEC
File Size:
120.87 KB
Description:
Switching n-channel power mos fet.
* Super Low On-Resistance RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0
* Low Ciss Ciss = 3 400 pF TYP.
* Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage
2SK2515
NEC
120.87 KB
Switching n-channel power mos fet.
📁 Related Datasheet
2SK2510 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2510
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2510 is N-Channel MOS Field Effe.
2SK2511 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2511
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2511 is N-Channel MOS Field Effe.
2SK2512 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2512
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2512 is N-Channel MOS Field Effe.
2SK2514 - SWITCHING N-CHANNEL POWER MOS FET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2514
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2514 is N-Channel MOS Field Effe.
2SK2516-01L - N-channel MOS-FET
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2SK2516-01L,S
FAP-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-chann.
2SK2516-01S - N-channel MOS-FET
(Fuji Electric)
2SK2516-01L,S
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> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-chann.
2SK2517-01L - N-channel MOS-FET
(Fuji Electric)
2SK2517-01L,S
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> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel.
2SK2517-01S - N-channel MOS-FET
(Fuji Electric)
2SK2517-01L,S
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel.
