Part number:
2SK2511
Manufacturer:
NEC
File Size:
116.24 KB
Description:
Switching n-channel power mos fet.
* Super Low On-Resistance RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0
* Low Ciss Ciss = 1 210 pF TYP.
* Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltag
2SK2511
NEC
116.24 KB
Switching n-channel power mos fet.
📁 Related Datasheet
2SK2510 - SWITCHING N-CHANNEL POWER MOS FET
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2510 is N-Channel MOS Field Effe.
2SK2512 - SWITCHING N-CHANNEL POWER MOS FET
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The 2SK2512 is N-Channel MOS Field Effe.
2SK2514 - SWITCHING N-CHANNEL POWER MOS FET
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MOS FIELD EFFECT TRANSISTOR
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DESCRIPTION
The 2SK2514 is N-Channel MOS Field Effe.
2SK2515 - SWITCHING N-CHANNEL POWER MOS FET
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MOS FIELD EFFECT TRANSISTOR
2SK2515
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DESCRIPTION
The 2SK2515 is N-Channel MOS Field Effe.
2SK2516-01L - N-channel MOS-FET
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High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
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2SK2516-01S - N-channel MOS-FET
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2SK2517-01L - N-channel MOS-FET
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High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
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2SK2517-01S - N-channel MOS-FET
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High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
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