2SK2514 - SWITCHING N-CHANNEL POWER MOS FET
The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter) 4.7 MAX.
1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1.
Gate 2.
Drain 3.
Source 4.
Fin (Drain) * Super Low On-Resistance RDS (on)1 ≤ 15 mΩ (VGS = 10 V,
2SK2514 Features
* 15.7 MAX. 4 3.2±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature
* PW ≤ 10 µs, Duty Cycle ≤ 1
