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2SK2514 SWITCHING N-CHANNEL POWER MOS FET

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Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number
2SK2514
Manufacturer
NEC
File Size
114.64 KB
Datasheet
2SK2514_NEC.pdf
Description
SWITCHING N-CHANNEL POWER MOS FET

Features

* 15.7 MAX. 4 3.2±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature
* PW ≤ 10 µs, Duty Cycle ≤ 1

Applications

* PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain)

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