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2SK2514 Datasheet - NEC

2SK2514 SWITCHING N-CHANNEL POWER MOS FET

The 2SK2514 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) * Super Low On-Resistance RDS (on)1 ≤ 15 mΩ (VGS = 10 V, .

2SK2514 Features

* 15.7 MAX. 4 3.2±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)

* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature

* PW ≤ 10 µs, Duty Cycle ≤ 1

2SK2514_NEC.pdf

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Datasheet Details

Part number:

2SK2514

Manufacturer:

NEC

File Size:

114.64 KB

Description:

Switching n-channel power mos fet.

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TAGS

2SK2514 2SK2514 SWITCHING N-CHANNEL POWER MOS FET NEC

2SK2514 Distributor