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2SK3591-01MR - N-CHANNEL SILICON POWER MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 150 V VDSX *5 120 V Continuous drain current Pulsed drain current ID ID(puls] ±57 A ±228 A Equivalent circuit schematic Gate-source voltage VGS ±30 V Non-repetitive Avalanche current IAS *2 Maximum Avalanche Energy EAS *1 57 A 272.
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