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2SK3592-01SJ - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3592-01SJ datasheet PDF. This datasheet also covers the 2SK3592-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3592-01L_FujiElectric.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fuji Electric

Part Number Description
2SK3592-01S N-CHANNEL SILICON POWER MOSFET
2SK3592-01L N-CHANNEL SILICON POWER MOSFET
2SK3590-01 N-CHANNEL SILICON POWER MOSFET
2SK3591-01MR N-CHANNEL SILICON POWER MOSFET
2SK3593-01 N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SK3592-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 150 V 120 A Continuous drain current ±57 A Pulsed drain current ±228 V Gate-source voltage ±30 A Non-repetitive Avalanche current 57 mJ Maximum Avalanche Energy 272.5 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 1.
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