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2SK3730-01MR - N-CHANNEL SILICON POWER MOSFET

2SK3730-01MR Description

2SK3730-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET *.
Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280.

2SK3730-01MR Features

* High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof
* Outline Drawings [mm]
* Equivalent circuit schematic Drain (D)

2SK3730-01MR Applications

* Switching regulators DC-DC converters General purpose power amplifier Gate (G) Source (S)

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Datasheet Details

Part number
2SK3730-01MR
Manufacturer
Fuji Electric
File Size
539.91 KB
Datasheet
2SK3730-01MR-FujiElectric.pdf
Description
N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET Fuji Electric
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