* Asynchronous SRAM Interface 1 M word × 16 bit Organization Fast Random Cycle Time : tRC = 90 ns Fast Random Access Time : tAA = tCE = 80 ns, 85 ns, 90 ns Low Power Consumption : IDDS1 = 200 µA, 100 µA (L version) , 70 µA (LL version) Wide O
MB82D01171A Datasheet (276.36 KB)
MB82D01171A
Fujitsu Media Devices
276.36 KB
16 mbit (1 m word x 16 bit) mobile phone application specific memory.
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-11404-2E
MEMORY Mobile FCRAMTM
CMOS
16 Mbit (1 M word × 16 bit)
Mobile Phone Applicatio.
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