* Asynchronous SRAM Interface Fast Access Cycle Time : 8 words Page Access Capability : Low Voltage Operating Condition : Wide Operating Temperature : tAA = tCE = 65 ns Max tPAA = 20 ns Max VDD = + 2.6 V to + 3.5 V TA =
* 30 °C to + 85 °C TJ =
MB82DP02183D Datasheet (299.89 KB)
MB82DP02183D
Fujitsu Media Devices
299.89 KB
32m bit (2 m word x 16 bit) mobile phone application specific memory.
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-11436-1E
MEMORY Mobile FCRAMTM
CMOS
32M Bit (2 M word × 16 bit)
Mobile Phone Application.
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