* Asynchronous SRAM Interface Fast Access Cycle Time : tAA = tCE = 65 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Low Voltage Operating Condition : VDD = +2.6 V to +3.1 V Wide Operating Temperature : TA = -30 °C to +85
MB82DP04183C Datasheet (317.50 KB)
MB82DP04183C
Fujitsu Media Devices
317.50 KB
64m bit (4 m word x 16 bit) mobile phone application specific memory.
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-11431-3E
MEMORY Mobile FCRAMTM
CMOS
64M Bit (4 M word × 16 bit)
Mobile Phone Application.
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