* Asynchronous SRAM Interface Fast Access Cycle Time : tAA = tCE = 65 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Low Voltage Operating Condition : VDD = +2.6 V to +3.5 V Wide Operating Temperature : TA = -30 °C to +85
MB82DP02183C-65L Datasheet (344.80 KB)
MB82DP02183C-65L
Fujitsu Media Devices
344.80 KB
Mobile phone application specific memory.
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-11422-3E
MEMORY Mobile FCRAMTM
CMOS
32M Bit (2 M word × 16 bit)
Mobile Phone Application Specific Memory
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