* Asynchronous SRAM Interface Fast Access Time : tCE = 70 ns Max 8 words Page Access Capability : tPAA = 20 ns Max Burst Read/Write Access Capability : tAC = 10 ns Max Low Voltage Operating Condition : VDD = 1.7 V to 1.95
MB82DBS04163C Datasheet (588.13 KB)
MB82DBS04163C
Fujitsu Media Devices
588.13 KB
Memory mobile fcramtm cmos 64 m bit.
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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-11432-1E
MEMORY Mobile FCRAMTM
CMOS
64 M Bit (4 M word×16 bit) MB82DBS04163C-70L
* D.
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