~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.5 AMPERES 200,150 VOLTS ROS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area w
D84BM2 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
Datasheet Details
D84BM2, D84BN2
GE
193.06 KB
Field effect power transistor.
This datasheet PDF includes multiple part numbers: D84BM2, D84BN2.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
