~o~~~LF FIELD EFFECT POVVER TRANSISTOR IRF710,711 D84BQ2~BQ1 1.5 AMPERES 400, 350 VOLTS RDS(ON) =3.6 .0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating a
