D84BN2 Datasheet - GE

D84BN2 FIELD EFFECT POWER TRANSISTOR

~D~~ FIELD EFFECT POVVER TRANSISTOR IRF610,611 D84BN2,M2 2.5 AMPERES 200,150 VOLTS ROS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area w.

D84BN2 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

D84BN2-GE.pdf

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Datasheet Details

Part number:

D84BN2

Manufacturer:

File Size:

193.06 KB

Description:

Field effect power transistor.

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