~o~~~LF FIELD EFFECT POVVER TRANSISTOR IRF710,711 D84BQ2~BQ1 1.5 AMPERES 400, 350 VOLTS RDS(ON) =3.6 .0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating a
D84BQ1 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
Datasheet Details
D84BQ1, D84BQ2
GE
196.59 KB
Field effect power transistor.
This datasheet PDF includes multiple part numbers: D84BQ1, D84BQ2.
Please refer to the document for exact specifications by model.
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