* Polysilicon gate - Improved stability and reliability
* No secondary breakd.own - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84CK2
GE
197.61 KB
Field effect power transistor.
~D~[P~U FIELD EFFECT POWER TRANSISTOR IRF520,521 D84CL2,K2 8 AMPERES 100, 60 VOLTS RDS(ON) =0.3 .0. This series of N-Channel Enhancement-mode Power .
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