* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84CM2
GE
208.15 KB
Field effect power transistor.
~o~~1J
RELD
*EFFECT POWER TRANSISTOR
IRF620,621
D84CN2,M2
5 AMPERES 200, 150 VOLTS ROS(ON) = 0.8 11
This series of N-Channel Enhancement-mode Po.
📁 Related Datasheet
D84CK2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRF520,521 D84CL2,K2
8 AMPERES 100, 60 VOLTS
RDS(ON) =0.3 .0.
This series of N-Channel Enhancement-mode Power .
D84CL2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRF520,521 D84CL2,K2
8 AMPERES 100, 60 VOLTS
RDS(ON) =0.3 .0.
This series of N-Channel Enhancement-mode Power .
D84CN2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~o~~1J
RELD ·EFFECT POWER TRANSISTOR
IRF620,621
D84CN2,M2
5 AMPERES 200, 150 VOLTS ROS(ON) = 0.8 11
This series of N-Channel Enhancement-mode Power .
D84CQ1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~
FIELD EFFECT POWER TRANSISTOR
IRF720,721 D84CQ2,Q1
3 AMPERES 400, 350 VOLTS
RDS(ON) =1.8 n
This series of N-Channel Enhancement-mode Power MOSF.
D84CQ2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~~
FIELD EFFECT POWER TRANSISTOR
IRF720,721 D84CQ2,Q1
3 AMPERES 400, 350 VOLTS
RDS(ON) =1.8 n
This series of N-Channel Enhancement-mode Power MOSF.
D84CR1 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF820,821 D84CR2,R1
2.5 AMPERES 500, 450 VOLTS
ROS(ON) =3.0 il
This series of N-Channel Enhancement-mode Power.
D84CR2 - FIELD EFFECT POWER TRANSISTOR
(GE)
~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRF820,821 D84CR2,R1
2.5 AMPERES 500, 450 VOLTS
ROS(ON) =3.0 il
This series of N-Channel Enhancement-mode Power.
D8407N - Rectifier Diode
(Infineon)
N
Netz-Gleichrichterdiode Rectifier Diode
Datenblatt / Data sheet
D8407N
Tvj = -40°C Tvj max VRRM IFRMSM IFAVM IFSM I²t 400 V 600 V 13200 A 4725 8.
