* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84CR1
GE
196.38 KB
Field effect power transistor.
~D~[P~ FIELD EFFECT POWER TRANSISTOR IRF820,821 D84CR2,R1 2.5 AMPERES 500, 450 VOLTS ROS(ON) =3.0 il This series of N-Channel Enhancement-mode Power.
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