* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low inputcapacitance - Reduced drive requirement
D84CQ1
GE
215.24 KB
Field effect power transistor.
~D~~ FIELD EFFECT POWER TRANSISTOR IRF720,721 D84CQ2,Q1 3 AMPERES 400, 350 VOLTS RDS(ON) =1.8 n This series of N-Channel Enhancement-mode Power MOSF.
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