D84CQ1 Datasheet - GE

D84CQ1 FIELD EFFECT POWER TRANSISTOR

~D~~ FIELD EFFECT POWER TRANSISTOR IRF720,721 D84CQ2,Q1 3 AMPERES 400, 350 VOLTS RDS(ON) =1.8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with .

D84CQ1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low inputcapacitance - Reduced drive requirement

D84CQ1 Datasheet (215.24 KB)

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Datasheet Details

Part number:

D84CQ1

Manufacturer:

File Size:

215.24 KB

Description:

Field effect power transistor.

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