* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low inputcapacitance - Reduced drive requirement
D84CQ2
GE
215.24 KB
Field effect power transistor.
~D~~
FIELD EFFECT POWER TRANSISTOR
IRF720,721 D84CQ2,Q1
3 AMPERES 400, 350 VOLTS
RDS(ON) =1.8 n
This series of N-Channel Enhancement-mode Power MOSF.
📁 Related Datasheet
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