* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
D84CN2
GE
208.15 KB
Field effect power transistor.
~o~~1J RELD EFFECT POWER TRANSISTOR IRF620,621 D84CN2,M2 5 AMPERES 200, 150 VOLTS ROS(ON) = 0.8 11 This series of N-Channel Enhancement-mode Po.
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