Datasheet4U Logo Datasheet4U.com

IRFD320 Datasheet - GE

IRFD320 - FIELD EFFECT POWER TRANSISTOR

~o~~ FIELD EFFECT PO'NER TRANSISTOR IRFD320,321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.

Also, the extended safe operating area

IRFD320 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD320-GE.pdf

Preview of IRFD320 PDF
IRFD320 Datasheet Preview Page 2

Datasheet Details

Part number:

IRFD320

Manufacturer:

GE

File Size:

184.46 KB

Description:

Field effect power transistor.

📁 Related Datasheet

📌 All Tags