* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD320
GE
184.46 KB
Field effect power transistor.
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FIELD EFFECT PO'NER TRANSISTOR
IRFD320,321 D82CQ2.Q1
0.5 AMPERES 400, 350 VOLTS RDS(ON} = 1.8 0
This series of N-Channel Enhancement-mode Power.
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