~o~~ FIELD EFFECT POVVER TRANSISTOR IRFD110,111 D82Bl2,K2 1.0 AMPERES 100,60 VOLTS RDS(ON} = 0.6 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area wi