* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD111
GE
188.89 KB
Field effect power transistor.
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FIELD EFFECT POVVER TRANSISTOR
IRFD110,111
D82Bl2,K2
1.0 AMPERES 100,60 VOLTS
RDS(ON} = 0.6 n
This series of N-Channel Enhancement-mode Power M.
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