~o~~ FIELD EFFECT POVVER TRANSISTOR IRFD110,111 D82Bl2,K2 1.0 AMPERES 100,60 VOLTS RDS(ON} = 0.6 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area wi
IRFD111 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
Datasheet Details
IRFD111, IRFD110
GE
188.89 KB
Field effect power transistor.
This datasheet PDF includes multiple part numbers: IRFD111, IRFD110.
Please refer to the document for exact specifications by model.
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