IRFD111 Datasheet - GE

IRFD111 FIELD EFFECT POWER TRANSISTOR

~o~~ FIELD EFFECT POVVER TRANSISTOR IRFD110,111 D82Bl2,K2 1.0 AMPERES 100,60 VOLTS RDS(ON} = 0.6 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area wi.

IRFD111 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD111 Datasheet (188.89 KB)

IRFD111 Datasheet Preview — Preview of IRFD111 PDF

Datasheet Details

Part number:

IRFD111

Manufacturer:

File Size:

188.89 KB

Description:

Field effect power transistor.

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IRFD111 FIELD EFFECT POWER TRANSISTOR GE

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