* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD1Z1
GE
197.33 KB
Field effect power transistor.
~[R3D~ [F~lr
FIELD EFFECT POWER TRANSISTOR
IRFD1Z0,1Z1 D82AL29K2
0.5 AMPERES 100, 60 VOLTS RDS(ON) = 2.4 !1
This series of N-Channel Enhancement-mod.
📁 Related Datasheet
IRFD1Z0 N-Channel MOSFET (Harris Semiconductor)
IRFD1Z0 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD1Z1 N-Channel MOSFET (Harris Semiconductor)
IRFD1Z2 N-Channel MOSFET (Harris Semiconductor)
IRFD1Z2 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD1Z3 N-Channel MOSFET (Harris Semiconductor)
IRFD1Z3 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD110 Power MOSFET (Vishay)
IRFD110 N-Channel Power MOSFET (Intersil Corporation)
IRFD110 Power MOSFET (International Rectifier)
