IRFD1Z1 - FIELD EFFECT POWER TRANSISTOR

This page provides the datasheet information for the IRFD1Z1, a member of the IRFD1Z0 FIELD EFFECT POWER TRANSISTOR family.

Product Overview

Part number	IRFD1Z1
Manufacturer	GE
File Size	197.33 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD1Z1 Datasheet
Additional preview pages of the IRFD1Z1 datasheet.

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-CHANNEl CASE STYLE 4-PIN DIP.

IRFD1Z1 - N-Channel MOSFET (Harris Semiconductor)
IRFD1Z0 - N-Channel MOSFET (Harris Semiconductor)
IRFD1Z2 - N-Channel MOSFET (Harris Semiconductor)
IRFD1Z3 - N-Channel MOSFET (Harris Semiconductor)
IRFD110 - Power MOSFET (Vishay)
IRFD110 - N-Channel Power MOSFET (Intersil Corporation)
IRFD110 - Power MOSFET (International Rectifier)
IRFD110PBF - HEXFET Power MOSFET (International Rectifier)
IRFD112 - (IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR (GE Solid State)
IRFD113 - (IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR (GE Solid State)

Other Datasheets by GE

Published: Feb 10, 2019 |