* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD1Z3
GE
184.54 KB
Field effect power transistor.
~D~
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FIELD EFFECT POVVER TRANSISTOR
IRFD1Z2,1Z3
0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il
This series of N-Channel Enhancement-mode Power MO.
📁 Related Datasheet
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IRFD1Z2 N-Channel MOSFET (Harris Semiconductor)
IRFD1Z2 FIELD EFFECT POWER TRANSISTOR (GE)
IRFD1Z3 N-Channel MOSFET (Harris Semiconductor)
IRFD110 Power MOSFET (Vishay)
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