IRFD1Z3, IRFD1Z2 Datasheet - GE

IRFD1Z3 FIELD EFFECT POWER TRANSISTOR

~D~ ~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area wit.

IRFD1Z3 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD1Z2-GE.pdf

IRFD1Z3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IRFD1Z3, IRFD1Z2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IRFD1Z3, IRFD1Z2

Manufacturer:

File Size:

184.54 KB

Description:

Field effect power transistor.

Note:

This datasheet PDF includes multiple part numbers: IRFD1Z3, IRFD1Z2.
Please refer to the document for exact specifications by model.

IRFD1Z3 Distributor

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IRFD1Z3 IRFD1Z2 FIELD EFFECT POWER TRANSISTOR GE