IRFD212 FIELD EFFECT POWER TRANSISTOR

Description

~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFET.

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Datasheet Specifications

Part number: IRFD212
Manufacturer: GE
File Size: 179.97 KB
Datasheet: IRFD212-GE.pdf
Description: FIELD EFFECT POWER TRANSISTOR

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

IRFD212 Distributors

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IRFD212 FIELD EFFECT POWER TRANSISTOR GE

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