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IRFD212 - FIELD EFFECT POWER TRANSISTOR

IRFD212 Description

~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFET.

IRFD212 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFD212
Manufacturer
GE
File Size
179.97 KB
Datasheet
IRFD212-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
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