IRFD212 Datasheet - GE

IRFD212 FIELD EFFECT POWER TRANSISTOR

~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power . supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with .

IRFD212 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD212-GE.pdf

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Datasheet Details

Part number:

IRFD212

Manufacturer:

File Size:

179.97 KB

Description:

Field effect power transistor.

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