IRFD212

FIELD EFFECT POWER TRANSISTOR

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IRFD212

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📥 IRFD212 Datasheet PDF

Description:

Field effect power transistor.
~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il Thi.
s series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to .

✔ IRFD212 Features

Polysilicon gate - Improved stability and reliability
No secondary breakdown - Excellent ruggedness
Ultra-fast switching - Independent of temperature
Voltage cont

✔ IRFD212 Application

including: switching power . supplies, inverters, converters and solenoid/relay drivers. Also, the extended

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IRFD212 FIELD EFFECT POWER TRANSISTOR GE