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IRFD210 Datasheet - Intersil Corporation

IRFD210 N-Channel Power MOSFET

only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader i.

IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring h.

IRFD210 Features

* 0.6A, 200V

* rDS(ON) = 1.500Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFD210 Datasheet (52.32 KB)

IRFD210 Datasheet Preview — Preview of IRFD210 PDF

Datasheet Details

Part number:

IRFD210

Manufacturer:

Intersil Corporation

File Size:

52.32 KB

Description:

N-channel power mosfet.

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IRFD210 N-Channel Power MOSFET Intersil Corporation

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