Datasheet4U Logo Datasheet4U.com

IRFD320 Datasheet - Intersil Corporation

IRFD320 - N-Channel Power MOSFET

IRFD320 Data Sheet July 1999 File Number 2325.4 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching .

IRFD320 Features

* 0.5A, 400V

* rDS(ON) = 1.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFD320_IntersilCorporation.pdf

Preview of IRFD320 PDF
IRFD320 Datasheet Preview Page 2 IRFD320 Datasheet Preview Page 3

Datasheet Details

Part number:

IRFD320

Manufacturer:

Intersil Corporation

File Size:

50.29 KB

Description:

N-channel power mosfet.

IRFD320 Distributor

📁 Related Datasheet

📌 All Tags