IRFD220 Datasheet - Intersil Corporation

IRFD220 N-Channel Power MOSFET

IRFD220 Data Sheet July 1999 File Number 2317.3 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching .

IRFD220 Features

* 0.8A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFD220_IntersilCorporation.pdf

IRFD220 Datasheet Preview — Preview of IRFD220 PDF

Datasheet Details

Part number:

IRFD220

Manufacturer:

Intersil Corporation

File Size:

51.94 KB

Description:

N-channel power mosfet.

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IRFD220 IRFD220 N-Channel Power MOSFET Intersil Corporation

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