IRFD110 Datasheet - Intersil Corporation

IRFD110 N-Channel Power MOSFET

IRFD110 Data Sheet July 1999 File Number 2314.3 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching tr.

IRFD110 Features

* 1A, 100V

* rDS(ON) = 0.600Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S

IRFD110 Datasheet (82.31 KB)

IRFD110 Datasheet Preview — Preview of IRFD110 PDF

Datasheet Details

Part number:

IRFD110

Manufacturer:

Intersil Corporation

File Size:

82.31 KB

Description:

N-channel power mosfet.

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IRFD110 N-Channel Power MOSFET Intersil Corporation

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