IRFD221 Datasheet - GE

IRFD221 FIELD EFFECT POWER TRANSISTOR

~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area.

IRFD221 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD221 Datasheet (188.34 KB)

IRFD221 Datasheet Preview — Preview of IRFD221 PDF

Datasheet Details

Part number:

IRFD221

Manufacturer:

File Size:

188.34 KB

Description:

Field effect power transistor.

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IRFD221 FIELD EFFECT POWER TRANSISTOR GE

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