Datasheet Details
Part number:
IRFD2Z0
Manufacturer:
GE
File Size:
184.75 KB
Description:
Field effect power transistor.
Datasheet Details
Part number:
IRFD2Z0
Manufacturer:
GE
File Size:
184.75 KB
Description:
Field effect power transistor.
IRFD2Z0, FIELD EFFECT POWER TRANSISTOR
~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe op
IRFD2Z0 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
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