Datasheet Details
Part number:
IRFD211, IRFD210
Manufacturer:
GE
File Size:
179.77 KB
Description:
Field effect power transistor.
Note:
This datasheet PDF includes multiple part numbers: IRFD211, IRFD210.
Please refer to the document for exact specifications by model.
IRFD211, IRFD210, FIELD EFFECT POWER TRANSISTOR
~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating
IRFD211 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
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