IRFD223 Datasheet - GE

IRFD223 FIELD EFFECT POWER TRANSISTOR

~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good l.

IRFD223 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD223 Datasheet (187.72 KB)

IRFD223 Datasheet Preview — Preview of IRFD223 PDF

Datasheet Details

Part number:

IRFD223

Manufacturer:

File Size:

187.72 KB

Description:

Field effect power transistor.

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IRFD223 FIELD EFFECT POWER TRANSISTOR GE

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