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IRFD223, IRFD222 FIELD EFFECT POWER TRANSISTOR

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Description

~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs ut.

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This datasheet PDF includes multiple part numbers: IRFD223, IRFD222. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRFD223, IRFD222
Manufacturer
GE
File Size
187.72 KB
Datasheet
IRFD222-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRFD223, IRFD222.
Please refer to the document for exact specifications by model.

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

IRFD223 Distributors

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