IRFD2Z1 Datasheet - GE

IRFD2Z1 FIELD EFFECT POWER TRANSISTOR

~ffi1DUYAOO ~ FIELD EFFECT POWER TRANSISTOR IRFD2Z0,2Z1 D82AN2-,_M2 0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0. This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe op.

IRFD2Z1 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD2Z1 Datasheet (184.75 KB)

IRFD2Z1 Datasheet Preview — Preview of IRFD2Z1 PDF

Datasheet Details

Part number:

IRFD2Z1

Manufacturer:

File Size:

184.75 KB

Description:

Field effect power transistor.

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IRFD2Z1 FIELD EFFECT POWER TRANSISTOR GE

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