IRFD222 Datasheet - GE

IRFD222 FIELD EFFECT POWER TRANSISTOR

~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good l.

IRFD222 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFD222-GE.pdf

IRFD222 Datasheet Preview — Preview of IRFD222 PDF

Datasheet Details

Part number:

IRFD222

Manufacturer:

File Size:

187.72 KB

Description:

Field effect power transistor.

📁 Related Datasheet

IRFD220 N-Channel Power MOSFET (Intersil Corporation)

IRFD220 Power MOSFET (International Rectifier)

IRFD220 N-Channel Power MOSFET (Fairchild Semiconductor)

IRFD220 FIELD EFFECT POWER TRANSISTOR (GE)

IRFD220 Power MOSFET (Vishay)

IRFD220PBF Power MOSFET (International Rectifier)

IRFD221 FIELD EFFECT POWER TRANSISTOR (GE)

IRFD223 FIELD EFFECT POWER TRANSISTOR (GE)

TAGS

IRFD222 IRFD222 FIELD EFFECT POWER TRANSISTOR GE

IRFD222 Distributor