Datasheet4U Logo Datasheet4U.com

IRFD222 - FIELD EFFECT POWER TRANSISTOR

IRFD222 Description

~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs ut.

IRFD222 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

📥 Download Datasheet

Preview of IRFD222 PDF
datasheet Preview Page 2

Datasheet Details

Part number
IRFD222
Manufacturer
GE
File Size
187.72 KB
Datasheet
IRFD222-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

📁 Related Datasheet

  • IRFD220 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFD220PBF - Power MOSFET (International Rectifier)
  • IRFD224 - Power MOSFET (International Rectifier)
  • IRFD210 - N-Channel Power MOSFET (Intersil Corporation)
  • IRFD210PBF - HEXFET Power MOSFET (International Rectifier)
  • IRFD213 - N-Channel Transistor (IOR)
  • IRFD214 - Power MOSFET (International Rectifier)
  • IRFD010 - Transistor (International Rectifier)

📌 All Tags

FIELD EFFECT POWER TRANSISTOR GE
GE IRFD222-like datasheet

IRFD222 Stock/Price