IRFD222 FIELD EFFECT POWER TRANSISTOR

Description

~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This series of N-Channel Enhancement-mode Power MOSFETs ut.

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Datasheet Specifications

Part number: IRFD222
Manufacturer: GE
File Size: 187.72 KB
Datasheet: IRFD222-GE.pdf
Description: FIELD EFFECT POWER TRANSISTOR

Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

IRFD222 Distributors

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IRFD222 FIELD EFFECT POWER TRANSISTOR GE

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