IRFD222

FIELD EFFECT POWER TRANSISTOR

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IRFD222

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187.72 KB

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Field effect power transistor.
~~D~~ FIELD EFFECT POWER TRANSISTOR IRFD222,223 0.7 AMPERES 200, 150 VOLTS RDS(ON) =.1.20 This ser.
ies of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achi.

✔ IRFD222 Features

Polysilicon gate - Improved stability and reliability
No secondary breakdown - Excellent ruggedness
Ultra-fast switching - Independent of temperature
Voltage cont

✔ IRFD222 Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended sa

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IRFD222 FIELD EFFECT POWER TRANSISTOR GE

Datasheet Details

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✔ IRFD222 Features

✔ IRFD222 Application

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