Datasheet Details
Part number:
IRFD213, IRFD212
Manufacturer:
GE
File Size:
179.97 KB
Description:
Field effect power transistor.
Note:
This datasheet PDF includes multiple part numbers: IRFD213, IRFD212.
Please refer to the document for exact specifications by model.
IRFD213, IRFD212, FIELD EFFECT POWER TRANSISTOR
~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power .
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with
IRFD213 Features
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
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