IRFD1Z0 N-Channel MOSFET

Harris Semiconductor

Description

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: IRFD1Z0
Manufacturer: Harris Semiconductor
File Size: 57.16 KB
Datasheet: IRFD1Z0-HarrisSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 0.4A and 0.5A, 60V and 100V
* rDS(ON) = 2.4Ω and 3.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Gu

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17451. Symbol D Ordering

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IRFD1Z0 N-Channel MOSFET Harris Semiconductor

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