IRFD1Z0 Datasheet (Harris Semiconductor)

IRFD1Z0, N-Channel MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

They can

IRFD1Z0 Features

* 0.4A and 0.5A, 60V and 100V

* rDS(ON) = 2.4Ω and 3.2Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Gu